PART |
Description |
Maker |
SFD251H |
Crossed-Field Amplifier
|
Communications & Power Industries, Inc.
|
SKY13354-368LF-EVB |
0.1 to 3.0 GHz Dual SPDT Crossed Switch
|
Skyworks Solutions Inc.
|
2SK30ATM |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications
|
TOSHIBA
|
2SK711 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
|
TOSHIBA
|
2SK302 |
Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier Applications
|
TOSHIBA
|
2SK3079A |
Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications TRANSISTOR,MOSFET,N-CHANNEL,10V V(BR)DSS,3A I(D),RFMOD TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba. TOSHIBA[Toshiba Semiconductor]
|
NE350184C NE350184C-T1A NE350184C-T1 NE350184C-A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs CEL
|
2SK170 |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
TOSHIBA
|
2SK184 |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
TOSHIBA
|
2SJ338 |
Field Effect Transistor Silicon P Channel MOS Type Audio Frequency Power Amplifier Application
|
TOSHIBA
|
3SK249 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, UHF RF Amplifier Applications
|
TOSHIBA
|